To gain a deeper understanding of the luminescence of multiquantum wells and the factors affecting it on a microscopic level, cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to reveal the luminescence of In0.15Ga0.85N five-period multiquantum wells. The composition-wave-energy relationship was established in combination with energy-dispersive X-ray spectroscopy , and the bandgaps of In0.15Ga0.85N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence luminescence spectra. The luminescence differences between different periods of multiquantum wells and the effects on the luminescence of multiple quantum wells...
Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing eithe...
The microstructure and electronic structure of the asymmetric GaN/InGaN multiple quantum well (MQW) ...
Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies ...
III-group nitride alloys are widely used in various nitride-based photonics devices, such as light e...
© Author(s) 2016. Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN ...
Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from t...
The increasing demand for new opto-electronics devices such as solar cells, laser diodes (LD), and h...
Scanning electron microscopy allows for the investigation of materials down to the nanometre scale. ...
International audienceIn this work we compare luminescence results obtained on InGaN/GaN multiple qu...
Nitride-based three-dimensional core–shell nanorods (NRs) are promising candidates for the achieveme...
Directly correlated measurements of the surface morphology, light emission and subsurface structure ...
Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar ce...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing eithe...
The microstructure and electronic structure of the asymmetric GaN/InGaN multiple quantum well (MQW) ...
Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies ...
III-group nitride alloys are widely used in various nitride-based photonics devices, such as light e...
© Author(s) 2016. Nano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN ...
Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from t...
The increasing demand for new opto-electronics devices such as solar cells, laser diodes (LD), and h...
Scanning electron microscopy allows for the investigation of materials down to the nanometre scale. ...
International audienceIn this work we compare luminescence results obtained on InGaN/GaN multiple qu...
Nitride-based three-dimensional core–shell nanorods (NRs) are promising candidates for the achieveme...
Directly correlated measurements of the surface morphology, light emission and subsurface structure ...
Cathodoluminescence (CL) characteristics on 30-period InGaN/GaN multiple quantum well (MQW) solar ce...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Materials Science and Engineeri...
GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing eithe...
The microstructure and electronic structure of the asymmetric GaN/InGaN multiple quantum well (MQW) ...
Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies ...