High Current Density Vertical Nanowire TFETs With I₆₀ > 1 μ A/ μ m

We present experimental data for a vertical, 22-nm-diameter InAs/(In)GaAsSb nanowire Tunnel Field-Effect Transistor that exhibits the highest reported I60 of 1.2 μA/μm , paving the way for low power applications. The transistor reaches a minimum subthreshold swing of 43 mV/dec at VDS = 300 mV with a sub-60 mV/dec operation over a wide current range. Combined with a high transconductance of 205 μS/μm , the ON-current for the same device is 18.6 μA/μm at VDS = 300 mV for IOFF of 1 nA/ μm