Growth temperature (Ts) and ion irradiation energy (Ei) are important factors that influence film growth as well as their properties. In this study, we investigate the evolution of crystal structure and residual stress of TiNb-CrAlHfN films under various Ts and Ei conditions, where the latter is mainly controlled by tuning the flux of sputtered Hf ions using bipolar high-power impulse magnetron (BP-HiPIMS). The results show that TiNbCrAlHfN films exhibit the typical FCC NaCl-type structure. By increasing Ts from room temperature to 600 degrees C, the film texture changes from high-surface-energy (111) to low-surface-energy (100) accompanied by a higher crystal-linity in the out-of-plane direction and a more disordered growth tilt angle to t...
HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the depositio...
This thesis details the growth mechanisms and deposition processes for semiconducting cubic boron ni...
The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering ...
Multicomponent or high-entropy ceramics show unique combinations of mechanical, electrical, and chem...
Titanium nitride (TiN) films in the thickness range of 0.013 mu m to 0.3 pm were grown by high power...
International audienceIn this study, polycrystalline hafnium nitride (HfN) thin films were grown by ...
Publisher's version (útgefin grein)Thin hafnium nitride films were grown on SiO2 by reactive high po...
This thesis focuses on understanding the process-structure-property relation-ships for several refra...
CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOIon bombardment during film grow...
We have grown cubic boron nitride (c-BN) films on silicon (100) substrates by rf magnetron sputter d...
The effect of applying a positive voltage pulse (Urev = 10–150 V) directly after the negative high p...
In the present study, we investigate the impact of pulse power (Ppulse) on the ion flux and the prop...
We studied the development of crystallographic texture in aluminum nitride (AlN), titanium nitride (...
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physi...
In view of the increasing demand for achieving sustainable development, the quest for lowering energ...
HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the depositio...
This thesis details the growth mechanisms and deposition processes for semiconducting cubic boron ni...
The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering ...
Multicomponent or high-entropy ceramics show unique combinations of mechanical, electrical, and chem...
Titanium nitride (TiN) films in the thickness range of 0.013 mu m to 0.3 pm were grown by high power...
International audienceIn this study, polycrystalline hafnium nitride (HfN) thin films were grown by ...
Publisher's version (útgefin grein)Thin hafnium nitride films were grown on SiO2 by reactive high po...
This thesis focuses on understanding the process-structure-property relation-ships for several refra...
CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOIon bombardment during film grow...
We have grown cubic boron nitride (c-BN) films on silicon (100) substrates by rf magnetron sputter d...
The effect of applying a positive voltage pulse (Urev = 10–150 V) directly after the negative high p...
In the present study, we investigate the impact of pulse power (Ppulse) on the ion flux and the prop...
We studied the development of crystallographic texture in aluminum nitride (AlN), titanium nitride (...
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physi...
In view of the increasing demand for achieving sustainable development, the quest for lowering energ...
HIPIMS (High Power Impulse Magnetron Sputtering) discharge is a new PVD technology for the depositio...
This thesis details the growth mechanisms and deposition processes for semiconducting cubic boron ni...
The aim of the presented work was to deposit cubic boron nitride thin films by magnetron sputtering ...