Rubidium focused ion beam induced platinum deposition

This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Trimethylplatinum [ ( MeCp ) Pt ( Me ) 3 ] was used as the deposition precursor. Under similar beam energies, 8.5 keV for R b + and 8.0 keV for G a + , and beam current, near 10 pA, the two ion species deposited Pt films at 0.90 and 0.73 μ m 3 / nC , respectively. Energy-dispersive x-ray spectroscopy shows that R b + FIBID-Pt consists of similar Pt contents (49% for R b + FIBID and 37% for G a + FIBID) with much lower primary ion contents (5% Rb and 27% Ga) than G a + FIBID-Pt. The deposited material was also measured to have a resistivity of 8.1 × 10 4 μ Ω cm for the R b + FIBID-Pt and 5.7 × 10 3 μ Ω cm for G a + FIBID-Pt