C- and L-band low polarization sensitive nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform

Wang, Yu
Bhat, Srivathsa
Shi, Bin
Aalto, Timo
Calabretta, Nicola

Open link

Publication date

January 2023

DOI

10.23919/OFC49934.2023.10116918

Publisher

IEEE Institute of Electrical and Electronic Engineers

Abstract

We fabricated and assessed a wideband (C-/L- band) nanosecond 1×2 electro-optic switch in 3-μm thick silicon. Results show 2.5dB lowest insertion loss, 16dB averaged extinction ration, 2.5dB polarization dependent loss and 6-ns switching time.</p

Extracted data

We use cookies to provide a better user experience.

Data Protection

C- and L-band low polarization sensitive nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform

Abstract

Extracted data

C- and L-band low polarization sensitive nanosecond 1×2 electro-optic MZI switch on 3-μm thick silicon platform

Abstract

Extracted data

Related items

Related items