Abstract Carbon doping in GaN-on-Silicon (Si) epitaxial layers is an essential way to reduce leakage current and improve breakdown voltage. However, complicated occupy forms caused by carbon lead to hard analysis leakage/breakdown mechanisms of GaN-on-Si epitaxial layers. In this paper, we demonstrate the space charge distribution and intensity in GaN-on-Si epitaxial layers from 0 to 448 V by simulation. Depending on further monitoring of the trapped charge density of CN and CGa in carbon-doped GaN at 0.1 μm, 0.2 μm, 1.8 μm and 1.9 μm from unintentionally doped GaN/carbon-doped GaN interface, we discuss the relationship between space charge and plateau, breakdown at CN concentrations from 6 × 1016 cm−3 to 6 × 1018 cm−3. The results show tha...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine t...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (G...
International audienceIn this work an extensive analysis on the leakage current of three samples obt...
A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of...
We present an investigation of vertical leakage in GaN-on-Si epitaxial stack through electrical char...
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In o...
The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures h...
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In o...
GaN based HEMT devices on 4 inch Si (111) were characterized to study their electrical parameters, u...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine t...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
In this article, a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) structure was used to invest...
Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (G...
International audienceIn this work an extensive analysis on the leakage current of three samples obt...
A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of...
We present an investigation of vertical leakage in GaN-on-Si epitaxial stack through electrical char...
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In o...
The role of carbon-related traps in GaN-based ungated high-electron mobility transistor structures h...
We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In o...
GaN based HEMT devices on 4 inch Si (111) were characterized to study their electrical parameters, u...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...
Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine t...
A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/...