Design and Modeling of 4x4-bit RAM using Memristor

The memristor is a non-linear resistor which changes its state relative to the net electric flux passing through its two terminals. It saves its state after an electrical bias is removed. Hewlett Packard is credited for the large deal of efforts which has been spent in the research community to derive a suitable model able to capture the nonlinear dynamics of the nano-scale structures, based on titanium dioxide (TiO2) thin film. When more than one memristors are connected together than the behavior of the device is difficult to predict because the polarity-dependent nonlinear variation in the memristance of individual memristor. The relationships among flux, charge and memristance of diverse composite Memristor, using the HP-TiO2 model has been studied, and the characteristics of complex memristor circuits are analyzed. In this work, we are implementing a 4x4-bit RAM using memristor which works as an EPROM