NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at assessing the operation and the performance of nanoelectronic devices. It has served the computational nanoelectronic community for almost two decades and it is freely available to researchers around the world in its website (http://vides.nanotcad.com), being employed in hundreds of works by many electronic device simulation groups worldwide. We revise the code structure and its main modules and we present the new features directed towards (i) multi-scale approaches exploiting ab-initio electron-structure calculations, aiming at the exploitation of new physics in electronic devices, (ii) the inclusion of arbitrary heterostructures of layered mate...
Nanotechnology is the field of applied science and technology that aims to manipulate, test and prod...
Miniaturization of electronics is an unstoppable trend in the semiconductor industry. Moore’s Law ha...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at asse...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (T...
The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconducto...
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even ...
Nanoscience has been one of the major research focuses of the U.S. and much of the world for the pas...
Among the challenges faced in further miniaturization of electronic devices, heavy influence of the ...
Two-dimensional materials (2DMs) have only recently entered the nanoelectronic scenario, so that ass...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanode...
The simulation of nanostructures for sensor and circuit applications requires new concepts, namely e...
Conventional materials and device geometries have reached a limit that prevents further scaling. III...
Nanotechnology is the field of applied science and technology that aims to manipulate, test and prod...
Miniaturization of electronics is an unstoppable trend in the semiconductor industry. Moore’s Law ha...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...
NanoTCAD ViDES (Versatile DEvice Simulator) is an open-source suite of computing codes aimed at asse...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
Simulation of conventional and emerging electronic devices using Technology Computer Aided Design (T...
The modeling of nano-electronic devices is a cost-effective approach for optimizing the semiconducto...
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even ...
Nanoscience has been one of the major research focuses of the U.S. and much of the world for the pas...
Among the challenges faced in further miniaturization of electronic devices, heavy influence of the ...
Two-dimensional materials (2DMs) have only recently entered the nanoelectronic scenario, so that ass...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanode...
The simulation of nanostructures for sensor and circuit applications requires new concepts, namely e...
Conventional materials and device geometries have reached a limit that prevents further scaling. III...
Nanotechnology is the field of applied science and technology that aims to manipulate, test and prod...
Miniaturization of electronics is an unstoppable trend in the semiconductor industry. Moore’s Law ha...
Undesirable short-channel effects associated with the relentless downscaling of conventional CMOS de...