Our study involves the cleaning, wet etching, and characterization of GaAs wafer in the first semiconductor device fabrication laboratory at the Institute of Electronics, Atomic Energy Research Establishment. Our primary step is to develop necessary photolithography skill and thoroughly characterize equipment needed to perform photolithography including Hot plate, Spinner, Mask Aligner. Here, our studies are extended to photo resist thickness measurements using surface profiler and SEM to view etched surface quality. The experiences and the results of this study will benefit the students who are interested in the semiconductor fabrication field in Bangladesh
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
Through use of analytical techniques and process monitors, we have studied metal adhesion to the waf...
The study involves the cleaning, wet etching and characterization of GaAs wafer in the first semicon...
Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chem...
In this paper, we discuss the preparation of GaAs crystal surfaces by me-chanical and chemical techn...
stripper, gallium arsenide (GaAs), and metal lift-off The occurrence of galvanic corrosion on compou...
International audienceResonant microelectromechanical systems are promising devices for real time an...
By the use of multi-level plasma etch experimental designs, an alternative method for post-etch phot...
The vertical structure of AlGaAs/GaAs epitaxial layer systems for micro- and optoelectronic device f...
The aim of the study was to check the potential of wet chemical etching to improve the performance o...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
The thinning of semiconductor specimens for trans-mission electron microscopy by the wel l-known jet...
Dry etching induced surface damage has been characterised, in a novel way, for thin n+ GaAs epitaxia...
Real time spectroscopic ellipsometry (RTSE) was used to control the etch depth into a semiconductor ...
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
Through use of analytical techniques and process monitors, we have studied metal adhesion to the waf...
The study involves the cleaning, wet etching and characterization of GaAs wafer in the first semicon...
Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chem...
In this paper, we discuss the preparation of GaAs crystal surfaces by me-chanical and chemical techn...
stripper, gallium arsenide (GaAs), and metal lift-off The occurrence of galvanic corrosion on compou...
International audienceResonant microelectromechanical systems are promising devices for real time an...
By the use of multi-level plasma etch experimental designs, an alternative method for post-etch phot...
The vertical structure of AlGaAs/GaAs epitaxial layer systems for micro- and optoelectronic device f...
The aim of the study was to check the potential of wet chemical etching to improve the performance o...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
The thinning of semiconductor specimens for trans-mission electron microscopy by the wel l-known jet...
Dry etching induced surface damage has been characterised, in a novel way, for thin n+ GaAs epitaxia...
Real time spectroscopic ellipsometry (RTSE) was used to control the etch depth into a semiconductor ...
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
Through use of analytical techniques and process monitors, we have studied metal adhesion to the waf...