Effects of High-Energy Protons on a Self-Refresh DRAM

This work targets the study of the effects of high-energy protons on a commercial self-refresh DRAM. The memory devices under investigation were exposed to high-energy protons varying in a range from 70 MeV up to 230 MeV at the Proton Irradiation Facility in the Paul Scherrer Institute. The radiation-induced faults were identified as Single-Bit Upsets, stuck bits, and block errors. These results are in line with the outcome of our previous test campaigns, targeting thermal and atmospheric-like neutrons. The event cross sections for each fault type and energy are presented and discussed