Technical Physics Division, Bhabha Atomic Research Centre Trombay, Bombay 400085 Manuscript received 20 September 1967 ; accepted 11 November 1967 The intermetallic Compound Indium Antimonide belonging to gr.III — gr.V of the periodic table has been studied. The compounding techniques, methods used to overcome crucible cracking, Zone refining operations and their effect on physical parameters like resistivity, and Bridgman method of crystal growing are described
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
Silver solid solution phase with indium has been discovered to have great mechanical properties and ...
Intermetallic compounds are usually brittle with high melting points. Their properties are often fou...
The paper is concerned with monocrystalline indium antimonide unalloyed and alloyed with copper. The...
A systematic study of the role of the melt–solid interface position in determining the crystal quali...
Indium antimonide and gallium antimonide were synthesized from the respective component elements usi...
Single crystals of semiconductors and optical materials are very important in the field of computer ...
Using precision X-ray diffraction analysis, we have determined the unit-cell parameter of polycrysta...
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semic...
The reaction of indium (In) and silver (Ag) during the electroplating process of indium over a thick...
Abstract. We consider the growth technology and investigations of indium antimonide doped concurrent...
The atomic structures of the c(8x2) and c(4x4) reconstructions of InSb(001) have been determined usi...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...
The production process of the non-alloyed epitaxial indium antimonide layers for creation of the mul...
This report is the fifth and last in a series. The previous reports listed the compounds of elements
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
Silver solid solution phase with indium has been discovered to have great mechanical properties and ...
Intermetallic compounds are usually brittle with high melting points. Their properties are often fou...
The paper is concerned with monocrystalline indium antimonide unalloyed and alloyed with copper. The...
A systematic study of the role of the melt–solid interface position in determining the crystal quali...
Indium antimonide and gallium antimonide were synthesized from the respective component elements usi...
Single crystals of semiconductors and optical materials are very important in the field of computer ...
Using precision X-ray diffraction analysis, we have determined the unit-cell parameter of polycrysta...
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semic...
The reaction of indium (In) and silver (Ag) during the electroplating process of indium over a thick...
Abstract. We consider the growth technology and investigations of indium antimonide doped concurrent...
The atomic structures of the c(8x2) and c(4x4) reconstructions of InSb(001) have been determined usi...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...
The production process of the non-alloyed epitaxial indium antimonide layers for creation of the mul...
This report is the fifth and last in a series. The previous reports listed the compounds of elements
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
Silver solid solution phase with indium has been discovered to have great mechanical properties and ...
Intermetallic compounds are usually brittle with high melting points. Their properties are often fou...