This paper presents a SCR-based ESD protection devices for I/O clamp and power rail clamp, respectably. These devices have a low trigger voltage and high holding voltage characteristics than conventional SCR device. These devices are fabricated by using 0.35um BCD (Bipolar-CMOS-DMOS) processes. These devices were validated using a TLP system. From the experimental results, the device for I/O ESD clamp has a trigger voltage of 5.8V. Also, the device for power rail ESD clamp has a holding voltage of 7.7V
International audienceA new SCR-based device for ESD protection is presented through TCAD simulation...
We have proposed modifications in the standard SCR structure to inherently improve quasi static trig...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Abstract—A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed...
In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrate...
Abstract—This paper presents a new electrostatic discharge (ESD) protection design for input/output ...
This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The pr...
This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low ...
In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Dis...
A new high-voltage-tolerant power-rail electrostatic discharge (ESD) clamp circuit with a special ES...
Abstract—This paper presents a new electrostatic discharge (ESD) protection design for input/output ...
Abstract—In order to enhance the applications of SCR devices for deep-submicron CMOS technology, a n...
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mu m/3.3-V fully salicid...
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-μm/3.3-V fully salicided...
Abstract—A novel SCR design with “initial-on ” function is proposed to achieve the lowest trigger vo...
International audienceA new SCR-based device for ESD protection is presented through TCAD simulation...
We have proposed modifications in the standard SCR structure to inherently improve quasi static trig...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...
Abstract—A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed...
In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrate...
Abstract—This paper presents a new electrostatic discharge (ESD) protection design for input/output ...
This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The pr...
This paper proposed a silicon controller rectifier (SCR) based ESD protection device to protect low ...
In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Dis...
A new high-voltage-tolerant power-rail electrostatic discharge (ESD) clamp circuit with a special ES...
Abstract—This paper presents a new electrostatic discharge (ESD) protection design for input/output ...
Abstract—In order to enhance the applications of SCR devices for deep-submicron CMOS technology, a n...
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mu m/3.3-V fully salicid...
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-μm/3.3-V fully salicided...
Abstract—A novel SCR design with “initial-on ” function is proposed to achieve the lowest trigger vo...
International audienceA new SCR-based device for ESD protection is presented through TCAD simulation...
We have proposed modifications in the standard SCR structure to inherently improve quasi static trig...
A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR,...