Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz

This paper presents investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz. This work was already published in 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) with DOI : 10.1109/IRMMW-THz.2018.851021