Publication date
August 2021
DOIAbstract
Outline Introduction and Motivation Physical Origins of GaN HEMT Trapping Effects Modeling of Trap Capture and Emission Dynamics GaN HEMT Nonlinear Model Validation Conclusion
Outline Introduction and Motivation Physical Origins of GaN HEMT Trapping Effects Modeling of Trap Capture and Emission Dynamics GaN HEMT Nonlinear Model Validation Conclusion
Slow trapping phenomenon in AlGaN/GaN HEMTs has been extensively analyzed and described in this pape...
Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known t...
International audienceThis paper presents an original characterization method of trapping phenomena ...
A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap mode...
International audienceWe propose here a non-linear GaN HEMT model for CAD including a trapping effec...
International audienceTime-domain pulsed I-V measurements dedicated to characterising and modelling ...
This paper investigates the back-gating effects due to traps, and presents a new nonlinear trap mode...
Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identif...
none4noCharge trapping effects represent a major challenge in the performance evaluation and the mea...
Traps are characterized in AlGaN-GaN HEMTs by means of DLTS techniques and the associated charge/dis...
A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, al...
International audienceThis paper presents a non-linear electro-thermal AlGaN/GaN model for CAD appli...
The physical mechanisms involved in the trapping and de-trapping processes associated to surface don...
Compact modeling of charge trapping processes in GaN transistors is of fundamental importance for ad...
At the current stage of GaN technology development, AlGaN-GaN HEMTs must demonstrate adequate electr...
Slow trapping phenomenon in AlGaN/GaN HEMTs has been extensively analyzed and described in this pape...
Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known t...
International audienceThis paper presents an original characterization method of trapping phenomena ...
A procedure for the extraction of a trap model is applied to an AlGaN/GaN-on-SiC HEMT. The trap mode...
International audienceWe propose here a non-linear GaN HEMT model for CAD including a trapping effec...
International audienceTime-domain pulsed I-V measurements dedicated to characterising and modelling ...
This paper investigates the back-gating effects due to traps, and presents a new nonlinear trap mode...
Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identif...
none4noCharge trapping effects represent a major challenge in the performance evaluation and the mea...
Traps are characterized in AlGaN-GaN HEMTs by means of DLTS techniques and the associated charge/dis...
A state-space empirical nonlinear model for GaN-based field-effect transistors (FETs) is defined, al...
International audienceThis paper presents a non-linear electro-thermal AlGaN/GaN model for CAD appli...
The physical mechanisms involved in the trapping and de-trapping processes associated to surface don...
Compact modeling of charge trapping processes in GaN transistors is of fundamental importance for ad...
At the current stage of GaN technology development, AlGaN-GaN HEMTs must demonstrate adequate electr...
Slow trapping phenomenon in AlGaN/GaN HEMTs has been extensively analyzed and described in this pape...
Charge trapping in Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) is known t...
International audienceThis paper presents an original characterization method of trapping phenomena ...
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