Field Effect Transistors (FETs) have led the progress of applications measuring the acidity in aqueous solutions thanks to their accuracy, ease of miniaturization and capacity of multiplexing. The signal-to-noise ratio and linearity of the sensors are two of the most relevant figures of merit that can facilitate the improvements of these devices. In this work we present the functionalization with aminopropyltriethoxysilane (APTES) of a promising new FET design consisting of a high height-towidth aspect ratio with an efficient 2D gating architecture that improves both factors. We measured the transistor transfer and output characteristics before and after APTES functionalization, obtaining an improved sensitivity and linearity in both respon...
The development of next generation medicines demands more sensitive and reliable label-free sensing ...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yiel...
We report a systematic investigation about the mechanism of pH sensing using SnO2 nanobelt field eff...
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to wi...
Dual‐gate field‐effect transistors (FETs) based on organic semiconductor polymer and SiOx as the top...
The development of next generation medicines demands more sensitive and reliable label-free sensing ...
Nowadays, Organic semiconductors (OSCs) are receiving increasing attention these days because they h...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
International audienceWe compare the pH sensing performance of non-functionalized carbon nanotubes (...
A novel, flexible and ductile organic field-effect transistor (OFET) able to detect pH changes in ch...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
Buried electrodes and protection of the semiconductor with a thing passivation layer are used to yie...
The need for improved system’s response time, sensitivity, selectivity and miniaturization has conti...
Ion sensitive field effect transistors (ISFETs) have long been used as analogue chemical sensors par...
The development of next generation medicines demands more sensitive and reliable label-free sensing ...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yiel...
We report a systematic investigation about the mechanism of pH sensing using SnO2 nanobelt field eff...
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to wi...
Dual‐gate field‐effect transistors (FETs) based on organic semiconductor polymer and SiOx as the top...
The development of next generation medicines demands more sensitive and reliable label-free sensing ...
Nowadays, Organic semiconductors (OSCs) are receiving increasing attention these days because they h...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
International audienceWe compare the pH sensing performance of non-functionalized carbon nanotubes (...
A novel, flexible and ductile organic field-effect transistor (OFET) able to detect pH changes in ch...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
Buried electrodes and protection of the semiconductor with a thing passivation layer are used to yie...
The need for improved system’s response time, sensitivity, selectivity and miniaturization has conti...
Ion sensitive field effect transistors (ISFETs) have long been used as analogue chemical sensors par...
The development of next generation medicines demands more sensitive and reliable label-free sensing ...
Field-effect transistors (FETs) form an established technology for sensing applications. However, re...
Buried electrodes and protection of the semiconductor with a thin passivation layer are used to yiel...