Development of hybrid technology (InP/Si) integrated modules for future mm-wave arrays

Millimeter-wave transistor based technologies are steadily progressing in areas such as electrical performance (noise and bandwidth), thermal management, power consumption, and miniaturization of complex receiver functionality, and are becoming a viable option for future large-format (> 20 pixels) heterodyne arrays for radio-astronomy. InP and Si-based MMIC technologies have progressed enough so the promise of extreme receiver miniaturization in a small footprint is quickly becoming reality. InP has continued with the dominance in mm-wave cryogenic electrical performance, whereas Si-based circuits have emerged as good candidates in terms of high integration of functionality, and low power consumption. In this talk, we will show recent developments in the design of InP/Si active devices, and discuss about hybrid integration (InP/Si) with the aim of prototyping modules that mix the best of both technologies, increasing the performance of future large mm-wave arrays.Funded by: ANID-Fondecyt 1181620 ANID-QUIMAL ASTRO20-008