PREPARATION AND ELECTRICAL PROPERTIES OF ERS FILMS

Abstract Thin polycrystalline ErS films have been grown by thermal evaporation in vacuum from two separate sources on glass-ceramic, sapphire, and single-crystal silicon substrates. It has been shown that the substrate material does not significantly affect the phase composition and crystallinity of the prepared films. Films have cubic structure of NaCl type with lattice parameter a = 5.46 Å. The optimal temperature of the substrate is 820-870 K. The resistivity, Hall coefficient, and thermoelectric power of the films have been measured as functions of temperature in the temperature range 95-750 K. It has been shown that with increasing temperature the resistivity of the films linearly increases. The Hall coefficient is negative, and doesn't depend on temperature. The thermoelectric power is positive. its absolute value in the range of temperatures ~ 95 – 180 K slightly increases from to V/K and then in the area ~ 180 – 750 K decreases from to V/K. According to electrical measurements, ErS is a metal.References: 1. Semei V., Cahay M., Thien Binh Vu. Patchwork field emission properties of lan-thanum monosulfide thin films// J.Vac.Sci.Tecnol.2006.V.24.№5.P.2412-2416 2. Verna A, S. Electronic and optical properties of rare earth chalcogenides and pnictides//African Phys review. 2009. V. 3.P.11-29. 3. Yuan H., Zhang J.,Yu R., Su Q. Synthesis of rare earth sulfides and their UV via absorption spectra. // J. of Rare Earth. 2009. V. 27. №2. P.308-311. 4. Vasiliev l.N., Grabov V.M., Golubkov A.V., Gorobets A.G., Oskotski V.S., Smirnov I.A., Tichonov V.V. Physical properties an phase transitions of rare earth monosulfides in the homogeneity range//Phys, Stat. Sol.(a). 2006. V. 80.№1.P.237-241. 5. Samie M., Garre K., Cahay M., Kozel B.,Fairchid S.,Frader J.W., Locrvood D.J. Field emission characteristics of lanthanum monosulfide cold cathode array fabricated using microelectromechanical systems technology//J.Vac.Sci.Tech.B.2008.V.26.№2. P.764-769. 6. Тетерин П.Е. Исследование структурных и функцинальных свойсти тонко-пленочных слоев монохалькогенидов редкоземельных металлов, выращенных ме-тодом импульсного лазерного осаждения. // диссертации на соискание ученой степени кандидата физ-мат наук. М.2013 г. 20 с. 7. Тетерин П.Е., Зенкевич А.В., Лебединский Ю.Ю., Парфенов О.Е.// Исследо-вание структурных и электрофизических свойств тонкопленочных слоев SmS и EuS// Труды Научной сессии МИФИ. 2010.Т.1.С.172. 8. Грошев И.А., Полухин И.Ю. Сульфид самария и новейшие разработки на его основе //ФТТ. 2014.№8.С.150-157. 9. Yuan H., Zhang J., Yu R., Su Q. Synthesis of rare earth sulfides and their UV-vis absorption spectra. //J.of Rare Earth. 2009. V.27.№2. P.308-311. 10. Wang L., Marin C.M., Mei W.N.,Cheung C. Electronic structures of lanthanum, samarium and gadolinium sulfides. //AIMS mater. Sci. 2015.2.97-105.doi:10.3934/mater.sci2015.2.97.[Cross Ref] [Google Scholar]. 11. Ярембаш Е.И., Елисеев А.А.// Халькогениды редкоземельных элеметов. М.: Наука,.1975. 258 c. 12. Голубков А.В.,Гончарова Е.В., Жузе В.П., Логинов Г.М.,Сергеева В.М.,Смирнов И.А. //Физические свойства халькогенидов редкоземельных элемен-тов. Л.: Наука, 1973. 304 c