We have modeled the effect of a graded band gap window on the performance of a single junction AlxGa1-xAs/GaAs solar cell. First, we study the electrical characteristics of a single junction AlxGa1-xAs/GaAs solar cell, by employing an optimized structure for this solar cell, we show that grading the band gap of the window can increase the conversion efficiency of the solar cell by about 1.5%, and can also improve the quantum efficiency of the solar cell especially at shorter wavelengths
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-...
Besides cost, the most fundamental issue in assessing photovoltaic solar cells is efficiency. The be...
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-...
We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-graded ...
The conduction band discontinuity or spike in an abrupt heterojunction p+ GaAs / NAl0.4 Ga0.6As sola...
The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerica...
AbstractThe effects of quasi-electric fields, caused by the band-gap variation of the active semicon...
AbstractIn this paper we have implemented a model for the intermediate band GaAs solar cell. The mod...
AbstractThe effects of quasi-electric fields, caused by the band-gap variation of the active semicon...
none3siCIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the spa...
Zimmer J, Stiebig H, Wagner H. a-SiGe : H based solar cells with graded absorption layer. J. Appl. P...
A detailed theoretical analysis of graded band-gap P Ga1-χAl χAs-N Ga1-yAlyAs solar cells yields air...
The high efficiency reported recently by NREL for CIGS solar cells demonstrates the potential of ban...
CIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the space char...
CIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the space char...
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-...
Besides cost, the most fundamental issue in assessing photovoltaic solar cells is efficiency. The be...
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-...
We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-graded ...
The conduction band discontinuity or spike in an abrupt heterojunction p+ GaAs / NAl0.4 Ga0.6As sola...
The photo current-voltage characteristic of a solar cell with graded band gap is calculated numerica...
AbstractThe effects of quasi-electric fields, caused by the band-gap variation of the active semicon...
AbstractIn this paper we have implemented a model for the intermediate band GaAs solar cell. The mod...
AbstractThe effects of quasi-electric fields, caused by the band-gap variation of the active semicon...
none3siCIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the spa...
Zimmer J, Stiebig H, Wagner H. a-SiGe : H based solar cells with graded absorption layer. J. Appl. P...
A detailed theoretical analysis of graded band-gap P Ga1-χAl χAs-N Ga1-yAlyAs solar cells yields air...
The high efficiency reported recently by NREL for CIGS solar cells demonstrates the potential of ban...
CIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the space char...
CIGS thin film solar cells with Valence Band (VB) and Conduction Band (CB) grading in the space char...
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-...
Besides cost, the most fundamental issue in assessing photovoltaic solar cells is efficiency. The be...
A p-n junction is considered with a p-type graded band gap CdHgTe alloy as the front layer and an n-...