ESD protection design in a-IGZO TFT technologies

Scholz M.
Steudel S.
Myny K.
Chen S.
Boschke R.
Hellings G.
Linten D.

Publication date

October 2016

DOI

10.1109/EOSESD.2016.7592523

Abstract

Thin Film Transistor (TFT) with amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) as channel material are characterized with TLP and HBM testing. The low mobility of the a-IGZO channel results in an ESD robustness of only 0.3 mA/um. This makes ESD protection design in a TFT technology a challenging task

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ESD protection design in a-IGZO TFT technologies

Abstract

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ESD protection design in a-IGZO TFT technologies

Abstract

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