A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 Monolithic Sensor
- F. Piro
- P. Allport
- I. Asensi
- I. Berdalovic
- D. Bortoletto
- C. Buttar
- R. Cardella
- E. Charbon
- F. Dachs
- V. Dao
- D. Dobrijevic
- M. Dyndal
- L. Flores
- P. Freeman
- A. Gabrielli
- L. Gonella
- T. Kugathasan
- M. LeBlanc
- K. Oyulmaz
- H. Pernegger
- P. Riedler
- M. van Rijnbach
- H. Sandaker
- A. Sharma
- C. Solans
- W. Snoeys
- T. Suligoj
- J. Torres
- S. Worm
DOIAbstract
In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance (<5 fF) and allows full CMOS in-pixel circuitry. The circuit is implemented in the 180-nm CMOS imaging technology from the TowerJazz foundry and integrated into the MALTA2 chip, which is part of a development that targets the specifications of the outer pixel layer of the ATLAS Inner Tracker upgrade at the LHC. One of the main challenges for monolithic sensors is a radiation hardness up to 10 15 1-MeV neq/cm2 non-ionizi...
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