The IGBT model is improved to use in SPICE simulation program. The convergence problems of mathematical algorithms are solved. The accuracy of the compact model improved. The temperature range of the model extended
As the power density and switching frequency increase, thermal analysis of power electronics system ...
The concept introduced by MathWorks in the Simscape product is the link representation between the S...
IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power application...
A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide b...
An improved analytical model for IGB power transistors has been developed for circuit simulators. Sp...
In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT...
IGBTs are the most preferred power devices in medium power and frequency applications. Due to rapid ...
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliab...
The paper deals with the evaluation of a suitable model for power IGBTs targeted for use in power el...
A new application of a circuit simulation program (SPICE) is presented. The static behaviour of a co...
Each year semiconductor manufacturers spend millions of dollars in the development of new products. ...
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circ...
Abstract: A novel IGBT electrothermal model is implemented for the first time in PSpice for the simu...
Temperature junction constraints in power semiconductor devices are one of the factors that can dete...
This paper presents the steps and the challenges for implementing analytical, physics-based models f...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
The concept introduced by MathWorks in the Simscape product is the link representation between the S...
IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power application...
A new compact model for power IGBTs is presented in this paper. In the proposed approach, the wide b...
An improved analytical model for IGB power transistors has been developed for circuit simulators. Sp...
In this work, the implementation of a compact electro-thermal model of a trench gate field-stop IGBT...
IGBTs are the most preferred power devices in medium power and frequency applications. Due to rapid ...
An optimized electro-thermal IGBT SPICE model based on the Kraus model was developed to allow reliab...
The paper deals with the evaluation of a suitable model for power IGBTs targeted for use in power el...
A new application of a circuit simulation program (SPICE) is presented. The static behaviour of a co...
Each year semiconductor manufacturers spend millions of dollars in the development of new products. ...
A simplified IGBT (Insulated Gate Bipolar Transistor) SPICE macromodel, based on its equivalent circ...
Abstract: A novel IGBT electrothermal model is implemented for the first time in PSpice for the simu...
Temperature junction constraints in power semiconductor devices are one of the factors that can dete...
This paper presents the steps and the challenges for implementing analytical, physics-based models f...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
The concept introduced by MathWorks in the Simscape product is the link representation between the S...
IGBT (Insulated Gate Bipolar Transistor) is becoming more and more popular in many power application...
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