Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: dependence on Mg-doping level

Within this paper we investigate the degradation of GaN-HEMTs with p-GaN gate submitted to stress at forward gate bias. We studied the effect of both constant-voltage stress and short-pulse stress (induced by TLP, Transmis- sion Line Pulser); devices having three different Mg-doping levels (ranging from 2.1 · 10^19/cm^3 to 2.9 · 10^19/cm^3) were used for the study.We demonstrated the existence of two different degradation mechanisms, depending on the stress conditions: (i) when submitted to TLP stress (100 ns pulses with increasing amplitude), the failure occurs through a field- driven process, i.e. the breakdown of the metal/p-GaN Schottky junction, which is reversely biased when the gate is at positive voltage. Failure voltage decreases with increasing Mg doping, since higher acceptor levels result in a higher electric field. (ii) Conversely, during constant-voltage stress, the long-term stability is undermined by a current-driven process, namely the accumulation of positive charges at the p-GaN/AlGaN interface, which pro- motes an increase of the leakage current, first gradual and then catastrophic. Increasing Mg-concentration in the p-GaN results in a reduction of the gate leakage at high forward gate bias. As a consequence, devices with higher Mg doping have long TTF ( more than two orders of magnitude with respect to the samples with lower Mg doping