This work reports a wideband transimpedance amplifier MMIC with ultra-low input referred noise current. Being based on transferred substrate InP DHBT process, this work achieves a significant leap forward for ultra-low noise transimpedance amplifier design particularly in HBT based processes, in which, low noise characteristic is fundamentally challenging to achieve. Using a low bias current for amplification, the noise current is kept low. As a result, the amplification is achieved without compromising the noise current performance of the circuit. A 3-dB bandwidth from DC to 10 GHz was achieved with a transimpedance gain of beyond 50 dBΩ with a measured input referred noise current density of 3 √⁄. To the authors best knowledge, this is t...
International audience—We present the low frequency noise and the photoresponse in InP double hetero...
Abstract—This paper presents the development of a wide-band amplifier with matched input impedance a...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...
[[abstract]]A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technolog...
InP/GaAs0.51Sb0.49/InP DHBT (Double Heterojunction Bipolar Transistor) technology is investigated ...
This thesis treats the design and characterization of amplifiers operating up to submillimeter-wave ...
A transimpedance amplifier based on 0.7 μm InAlAs/InGaAs/InP HEMTs and applicable for bit rates in t...
In this paper, a novel current-mode transimpedance amplifier (TIA) exploiting the common gate input ...
We report a fully differential transimpedance amplifier (TIA) using common base and cascode topology...
In this work, we present a novel TIA with ultra-high transimpedance gain, achieved without the use o...
A low-noise transimpedance amplifier with tunable high gain is presented in this paper. It uses an i...
This paper presents design, mathematical analysis, and measurement of low noise single-stage transim...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
This paper reports a distributed baseband transimpedance amplifier for optical links up to 10 Gb/s. ...
In this paper, we present current amplifier based transimpedance amplifier (TIA) for biosensor appli...
International audience—We present the low frequency noise and the photoresponse in InP double hetero...
Abstract—This paper presents the development of a wide-band amplifier with matched input impedance a...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...
[[abstract]]A low-power transimpedance amplifier is presented based on InP/GaAsSb/InP DHBT technolog...
InP/GaAs0.51Sb0.49/InP DHBT (Double Heterojunction Bipolar Transistor) technology is investigated ...
This thesis treats the design and characterization of amplifiers operating up to submillimeter-wave ...
A transimpedance amplifier based on 0.7 μm InAlAs/InGaAs/InP HEMTs and applicable for bit rates in t...
In this paper, a novel current-mode transimpedance amplifier (TIA) exploiting the common gate input ...
We report a fully differential transimpedance amplifier (TIA) using common base and cascode topology...
In this work, we present a novel TIA with ultra-high transimpedance gain, achieved without the use o...
A low-noise transimpedance amplifier with tunable high gain is presented in this paper. It uses an i...
This paper presents design, mathematical analysis, and measurement of low noise single-stage transim...
Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction ...
This paper reports a distributed baseband transimpedance amplifier for optical links up to 10 Gb/s. ...
In this paper, we present current amplifier based transimpedance amplifier (TIA) for biosensor appli...
International audience—We present the low frequency noise and the photoresponse in InP double hetero...
Abstract—This paper presents the development of a wide-band amplifier with matched input impedance a...
The noise models of InP and GaAs HEMTs are compared with measurements at both 300 and 20 K. The crit...