Doherty Power Amplifier for LTE-Advanced Systems

The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3–3.5 GHz. Rogers RO4350B material is used as a substrate material, a back-off of 8 dB was achieved with an average gain of 10 dB. Load-pull data are an important tool for determining the optimum load impedance that the transistor needs to see. Additionally, the measured efficiency was 50% when the designed amplifier was tested by a modulated signal of 8 dB peak-to-average-power ratio when the average output power was 40 dBm. At the same time, the linearity of the designed amplifier was measured and found 31.8 dB which can be improved using a digital pre-distorter. The gain phase measurement can be used as an indicator for compensating the phase difference between the two cells