Carrier Mobility in The Field Effect Transistor Channel in The Single Walled Carbon Nanotubes

Abstract: We have studied about a field effect transistor channel carrier mobility in semiconducting single walled carbon nanotubes. The mobility applies only to channel-controlled metal oxide semiconductor field effect transistor like carbon nanotube field effect transistors. We have used the energy dispersion of one - dimensional sub-bands that is based on the band structure of semiconducting single walled carbon nanotubes. The energy dispersion approaches a metallic single walled carbon nanotube. We have found the induced charge density, conductance and field effect mobility as a function of the gate voltage in which the scattering time is proportional to the dimeter of single walled carbon nanotube and inversely proportional to the temperature. The obtained results were found in good agreement with previous results