Design of high power amplifier based on wilkinson power combiner for wireless communications

This article presents the design and fabrication of a high power amplifier based on wilkinson power combiner. A 45W basic amplifier module is designed using laterally-diffused metal-oxide semiconductor (LDMOS) field effect transistor (FET) PTFA260451E transistor. Wilkinson power combiner is used to combine two input powers to produce 90W of power. The proposed power amplifier is researched, designed and optimized using advanced design system (ADS) software. Experimental results show that the gain is 11.5 dB greater than at 2.45-3.0 GHz frequency band and achieving maximum power gain of 13.5 dB at 2.65 GHz centre frequency; output power increased to 49.3 dBm; Power added efficiency of 62.1% and good impedances matching: input reflection coefficient (S11)<-10 dB, output reflection coefficient (S22)<-15 dB. The designed amplifier can be used for 4G, 5G mobile communications and S-band satellite communication