Thickness profile data measured for aluminium oxide thin film grown by atomic layer deposition (ALD) using trimethylaluminium and water as reactants at 300 degrees Celsius on an all-silicon lateral high-aspect-ratio (LHAR) test structure of type PillarHall(TM) LHAR3 (layout v1b), nominal gap height 500 nm. Part of this data has been used in the publication "Saturation profile based conformality analysis for atomic layer deposition: aluminum oxide in lateral high-aspect-ratio channels" https://doi.org/10.1039/D0CP03358H, where this sample was number 8 (unique manufacturing code V0001, see Table S3 of the supplementary info, which also contains details of the layouts: http://www.rsc.org/suppdata/d0/cp/d0cp03358h/d0cp03358h1.pdf). Thickness ...
The downscaling of future semiconductor devices with increasing 3D character leads to increasing dem...
Atomic layer deposition (ALD) is one of the most promising technologies in producing highly conforma...
The downscaling of future semiconductor devices with increasing 3D character leads to increasing dem...
In this study we compare the thicknesses and optical properties of atomic layer deposited (ALD) Al2O...
Atomic Layer Deposition (ALD) is a key technology in 3D microelectronics enabling conformal coatings...
Atomic layer deposition (ALD) is a fast-growing technique in manufacturing modern electronics due to...
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This wor...
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This wor...
Atomic Layer Deposition (ALD) technology enables manufacturing ofconformal thin films into such deep...
Device downscaling in semiconductor and microelectromechanical device industry brings new challenges...
Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio...
A series of simulated thickness profiles of atomic layer deposition (ALD) film grown in a wide later...
This work investigates the processes governing conformality achieved byALD, using Lateral High Aspec...
Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) proc...
The development of the conformal thin film process is at high importance, especially in 3D memory ap...
The downscaling of future semiconductor devices with increasing 3D character leads to increasing dem...
Atomic layer deposition (ALD) is one of the most promising technologies in producing highly conforma...
The downscaling of future semiconductor devices with increasing 3D character leads to increasing dem...
In this study we compare the thicknesses and optical properties of atomic layer deposited (ALD) Al2O...
Atomic Layer Deposition (ALD) is a key technology in 3D microelectronics enabling conformal coatings...
Atomic layer deposition (ALD) is a fast-growing technique in manufacturing modern electronics due to...
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This wor...
Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This wor...
Atomic Layer Deposition (ALD) technology enables manufacturing ofconformal thin films into such deep...
Device downscaling in semiconductor and microelectromechanical device industry brings new challenges...
Atomic layer deposition (ALD) of aluminum oxide thin films were applied on lateral high-aspect-ratio...
A series of simulated thickness profiles of atomic layer deposition (ALD) film grown in a wide later...
This work investigates the processes governing conformality achieved byALD, using Lateral High Aspec...
Film conformality is one of the major drivers for the interest in atomic layer deposition (ALD) proc...
The development of the conformal thin film process is at high importance, especially in 3D memory ap...
The downscaling of future semiconductor devices with increasing 3D character leads to increasing dem...
Atomic layer deposition (ALD) is one of the most promising technologies in producing highly conforma...
The downscaling of future semiconductor devices with increasing 3D character leads to increasing dem...