The study involves the cleaning, wet etching and characterization of GaAs wafer in the first semiconductor device fabrication Laboratory at the Institute of Electronics, Atomic Energy Research Establishment, Savar, Dhaka, Bangladesh during the year 2011. The primary step is to develop necessary photolithography skill in 100 class clean room with Cole-Parmer 365nmUV illumination and thoroughly characterize equipment needed to perform photolithography including Hot plate, Spinner. Here, the studies are extended to photo resist thickness measurements using surface profiler and SEM to view etched surface quality. The experiences and the results of this study will benefit the students who are interested in the semiconductor fabrication field in ...
Photodiode play important roles in optical communication systems nowadays. In this field, fiber opti...
A new HCI:CH3COOH:K2Cr207 system which is particularly suitable for use in etching solutions of GaAs...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
Our study involves the cleaning, wet etching, and characterization of GaAs wafer in the first semico...
Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chem...
stripper, gallium arsenide (GaAs), and metal lift-off The occurrence of galvanic corrosion on compou...
International audienceResonant microelectromechanical systems are promising devices for real time an...
In this paper, we discuss the preparation of GaAs crystal surfaces by me-chanical and chemical techn...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
Dry etching induced surface damage has been characterised, in a novel way, for thin n+ GaAs epitaxia...
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
Nowadays, lasers are used in many different applications, like telecommunications, radars, and medic...
In recent years, the pursuit of improving the wafer strength after thinning step has been an on goin...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
The vertical structure of AlGaAs/GaAs epitaxial layer systems for micro- and optoelectronic device f...
Photodiode play important roles in optical communication systems nowadays. In this field, fiber opti...
A new HCI:CH3COOH:K2Cr207 system which is particularly suitable for use in etching solutions of GaAs...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...
Our study involves the cleaning, wet etching, and characterization of GaAs wafer in the first semico...
Results of several experiments aimed at remedying photoresist adhesion failure during spray wet chem...
stripper, gallium arsenide (GaAs), and metal lift-off The occurrence of galvanic corrosion on compou...
International audienceResonant microelectromechanical systems are promising devices for real time an...
In this paper, we discuss the preparation of GaAs crystal surfaces by me-chanical and chemical techn...
A new room temperature wet chemical digital etching technique for GaAs is presented which uses hydro...
Dry etching induced surface damage has been characterised, in a novel way, for thin n+ GaAs epitaxia...
Etch rates for GaAs, tungsten, and photores is t were compared us ing CF4, CF4 + N2, and SF ~ + N2 ...
Nowadays, lasers are used in many different applications, like telecommunications, radars, and medic...
In recent years, the pursuit of improving the wafer strength after thinning step has been an on goin...
Ill-V semiconductors like GaAs can be wet-chemically etched by three mechanisms: electrochemically w...
The vertical structure of AlGaAs/GaAs epitaxial layer systems for micro- and optoelectronic device f...
Photodiode play important roles in optical communication systems nowadays. In this field, fiber opti...
A new HCI:CH3COOH:K2Cr207 system which is particularly suitable for use in etching solutions of GaAs...
CH3I vapor etching of masked and patterned GaAs substrates has been experimentally investigated. For...