Indium segregation in bulk GaInSb crystal grown using vibration assisted vertical directional solidification technique

Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) technique. The experiments were carried out using resistive furnace with temperature gradient of 10 0C/cm. The 4N grade Gallium (Ga) Indium (In) and Antimony (Sb) were taken in stoichiometric proportion and sealed in a quartz ampoule with cone angle 30o, under Argon atmosphere at pressure of 100 Torr. The compositional analysis has been done using EDAX technique. The effects of external vibrations on significant improvement in segregation of Indium content, associated multiphase growth and microcracks in crystal has been discussed