Improvement of Short Channel Effects in Cylindrical Strained Silicon Nanowire Transistor

In this paper we investigate the electrical characteristics of a new structure of gate all around strained silicon nanowire field effect transistors (FETs) with dual dielectrics by changing the radius (RSiGe) of silicon-germanium (SiGe) wire and gate dielectric. Indeed the effect of high-κ dielectric on Field Induced Barrier Lowering (FIBL) has been studied. Due to the higher electron mobility in tensile strained silicon, the n-type FETs with strained silicon channel have better drain current compare with the pure Si one. In this structure gate dielectric divided in two parts, we have used high-κ dielectric near the source and low-κ dielectric near the drain to reduce the short channel effects. By this structure short channel effects such as FIBL will be reduced indeed by increasing the RSiGe, ID-VD characteristics will be improved. The leakage current and transfer characteristics, the threshold-voltage (Vt), the drain induced barrier height lowering (DIBL), are estimated with respect to, gate bias (VG), RSiGe and different gate dielectrics. For short channel effects, such as DIBL, gate all around strained silicon nanowire FET have similar characteristics with the pure Si one while dual dielectrics can improve short channel effects in this structure