Impact of Extended Defects on the yield and Performance of 4H-SiC Power Devices

Outline Introduction: Yield, performance and reliability of 4H-SiC power devices Influences on yield/performance of 4H-SiC power devices Process variations: A example (lithography) Extended epitaxial defects An overview Stacking faults - Dark triangle defects Stacking faults - Light triangle defects Surface pits in implanted areas Influence of epitaxial defects on gate oxide performance Conclusio