This upload contains raw data from the manuscript "Sensitivity and fading of irradiated RADFETs with different gate voltages". The manuscript was published in the Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1029 (2022): 166473; DOI: https://doi.org/10.1016/j.nima.2022.166473 The upload consists of a .pdf file of the manuscript and .opj files with raw data related to the figures in the manuscript. This work was partly supported by the European Union’s Horizon 2020 research and innovation programme (Grant No. 857558) and the Ministry of Education, Science and Technology Development of the Republic of Serbia (Project No. 43011)
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where ...
In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where ...
This upload contains raw data from the manuscript "Radiation sensitive MOSFETs irradiated with vario...
This upload contains raw data from the manuscript "Radiation and Spontaneous Annealing of Radiation-...
This upload contains raw data from the manuscript "Floating-Gate MOS Transistor with Dynamic Biasing...
This upload contains raw data from the manuscript "A Design Concept for Radiation Hardened RADFET Re...
This upload contains raw data from the manuscript "Response of Commercial P-Channel Power VDMOS Tran...
This upload contains raw data from the manuscript "Recharging process of commercial floating-gate MO...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
This upload contains raw data from the manuscript "Commercial P-Channel Power VDMOSFET as X-ray Dosi...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
This paper mainly focuses on the effects of different gate biasing voltages and temperatures on seve...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
This upload contains raw data from the manuscript "Fading of pMOS dosimeters over a long period of t...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where ...
In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where ...
This upload contains raw data from the manuscript "Radiation sensitive MOSFETs irradiated with vario...
This upload contains raw data from the manuscript "Radiation and Spontaneous Annealing of Radiation-...
This upload contains raw data from the manuscript "Floating-Gate MOS Transistor with Dynamic Biasing...
This upload contains raw data from the manuscript "A Design Concept for Radiation Hardened RADFET Re...
This upload contains raw data from the manuscript "Response of Commercial P-Channel Power VDMOS Tran...
This upload contains raw data from the manuscript "Recharging process of commercial floating-gate MO...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
This upload contains raw data from the manuscript "Commercial P-Channel Power VDMOSFET as X-ray Dosi...
Investigation of Al-gate p-channel MOSFETs sensitivity following irradiation using 200 and 280 kV X-...
This paper mainly focuses on the effects of different gate biasing voltages and temperatures on seve...
This work was supported in part by the European Union's Horizon 2020 research and innovation program...
This upload contains raw data from the manuscript "Fading of pMOS dosimeters over a long period of t...
AbstractThis article tries to explain a modified method on dosimetry, based on electronic solid stat...
In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where ...
In the European XFEL, electrons bunches are accelerated up to 20 GeV and thenenter undulators where ...