The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at different thicknesses by radio frequency plasma enhanced chemical vapor deposition technique (rf-PECVD). Raman spectra display asymmetric diamond-like peaks, representative of the a-C:H films. The decrease of intensity ID/IG ratios revealed the sp3 content arise at different thicknesses of the a-C:H films. In terms of mechanical properties, the high hardness and elastic modulus values show the elastic and plastic deformation behaviors related to sp3 content in amorphous carbon films. Electro chemical properties showed that the a-C:H films exhibited excellent corrosion resistance in air-saturated 3.5 wt% NaCl solution for pH 2 at room temperature....
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...
The hydrogenated amorphous carbon films (a-C:H) were deposited on p-type Si (100) substrates at diff...