A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 mu C cm(-2), remnant polarization of 12.7 mu C cm(-2) and coercive field of 1.2 MV cm(-1). The films exhi...
The need for novel, super-high K dielectric gate oxides has substantially increased in recent years....
International audienceThe room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium...
Engineering of HfO2–ZrO2 ferroelectric thin films can substantially increase their dielectric consta...
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because...
In the last decade orthorhombic hafnia and zirconia films have attracted tremendous attention arisin...
A new approach for epitaxial stabilisation of ferroelectric orthorhombic (o-) ZrO2 films with negati...
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
Rhombohedral phase HfxZr1-xO2 (HZO, x from 0 to 1) films are promising for achieving robust ferroele...
In this work, the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass have be...
International audienceVarious applications have been suggested for fluorite-structure ferroelectrics...
Ultrathin Hf1_xZr 02 films have attracted tremendous interest since they show ferroelectric behavior...
The critical size limit of electric polarization remains a open domain in nanoscale ferroelectric re...
Thin film metal–insulator–metal capacitors with undoped HfO₂ as the insulator are fabricated by sput...
Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO...
The need for novel, super-high K dielectric gate oxides has substantially increased in recent years....
International audienceThe room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium...
Engineering of HfO2–ZrO2 ferroelectric thin films can substantially increase their dielectric consta...
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because...
In the last decade orthorhombic hafnia and zirconia films have attracted tremendous attention arisin...
A new approach for epitaxial stabilisation of ferroelectric orthorhombic (o-) ZrO2 films with negati...
Zirconia- and hafnia-based thin films have attracted tremendous attention in the past decade because...
Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at t...
Rhombohedral phase HfxZr1-xO2 (HZO, x from 0 to 1) films are promising for achieving robust ferroele...
In this work, the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass have be...
International audienceVarious applications have been suggested for fluorite-structure ferroelectrics...
Ultrathin Hf1_xZr 02 films have attracted tremendous interest since they show ferroelectric behavior...
The critical size limit of electric polarization remains a open domain in nanoscale ferroelectric re...
Thin film metal–insulator–metal capacitors with undoped HfO₂ as the insulator are fabricated by sput...
Ferroelectric orthorhombic Hf0.5Zr0.5O2 thin films have been stabilized epitaxially on La2/3Sr1/3MnO...
The need for novel, super-high K dielectric gate oxides has substantially increased in recent years....
International audienceThe room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium...
Engineering of HfO2–ZrO2 ferroelectric thin films can substantially increase their dielectric consta...