Efficient Light Emission from Hexagonal SiGe
- Fadaly, E.M.T.
- Dijkstra, Alain
- Suckert, J.R.
- Ziss, D.
- van Tilburg, M.A.J.
- Ren, Y.
- Mao, C.
- van Lange, V.T.
- Kölling, S.
- Verheijen, M.A.
- Busse, D.
- Rödl, C.
- Furthmüller, J.
- Bechstedt, F.
- Stangl, J.
- Finley, J.J.
- Botti, Silvana
- Haverkort, J.E.M.
- Bakkers, E.P.A.M.
DOIAbstract
Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices. Here, we show that we can create a direct band gap in Si 1-x Ge x alloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.651-x Ge x alloys have been fabricated and efficient light emission has been observed.Silicon and Germanium have an indirect band gap, which limits their use in optoelectronic devices Here, we show that we can create a direct band gap in Si1-xGexalloys by changing the crystal structure from cubic to hexagonal. DFT calculations predict a strong optical transition for 0.65>x>1. Hex-Si1-xGexalloys have been fabricated and efficient light emission has be...
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