We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a new Landauer-type resistance formula. The scaling behaviour at high voltage is significantly different from the scaling law due to Anderson et al. [Phys. Rev. B 22 (1980) 3519]. The finite voltage difference between both ends of the wire leads to much better statistical behaviour (in ensemble sense) of the resistance due to self-averaging over energy. Numerical results obtained for a simple model system illustrate the typical behaviour that is expected to be of conceptual importance for real systems.</p
It is now well known that in extreme quantum limit, dominated by the elastic impurity scattering and...
It is now well known that in the extreme quantum limit, dominated by the elastic impurity scattering...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...
We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a...
We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a...
We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a...
A novel generalized Landauer formula is derived and used to study the voltage-dependent resistance i...
A novel generalized Landauer formula is derived and used to study the voltage-dependent resistance i...
\u3cp\u3eA novel generalized Landauer formula is derived and used to study the voltage-dependent res...
We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered...
We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered...
Restricted Access.It is now well known that in the extreme quantum limit, dominated by the elastic i...
Restricted Access.The residual resistance of a microscopically disordered conductor is a non-additiv...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...
It is now well known that in extreme quantum limit, dominated by the elastic impurity scattering and...
It is now well known that in the extreme quantum limit, dominated by the elastic impurity scattering...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...
We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a...
We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a...
We have studied the voltage-dependent scaling of the resistance in a 1D disordered system by using a...
A novel generalized Landauer formula is derived and used to study the voltage-dependent resistance i...
A novel generalized Landauer formula is derived and used to study the voltage-dependent resistance i...
\u3cp\u3eA novel generalized Landauer formula is derived and used to study the voltage-dependent res...
We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered...
We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered...
Restricted Access.It is now well known that in the extreme quantum limit, dominated by the elastic i...
Restricted Access.The residual resistance of a microscopically disordered conductor is a non-additiv...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...
It is now well known that in extreme quantum limit, dominated by the elastic impurity scattering and...
It is now well known that in the extreme quantum limit, dominated by the elastic impurity scattering...
Following an invariant-imbedding approach, we obtain analytical expressions for the ensemble-average...