Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured