This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-band). The power amplifier employs an on-chip integrated 16-way in-phase output current combiner to achieve the required output power. Implemented in a 0.25-μm SiGe:C BiCMOS technology, the power amplifier achieves a power-added efficiency of 37.5% at 14.1GHz with greater than 35.5% across the band of interest.</p
This letter presents a four-way parallel-series power amplifier (PA) in 55-nm SiGe BiCMOS with in-li...
This work presents the design of a power amplifier (PA) with an AC-coupled common-emitter and common...
In this paper, we reported the design of single-ended power amplifier (PA) delivering an output powe...
This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-b...
This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applicatio...
A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and m...
International audienceThis paper presents the performance of a wideband 0.13μm BiCMOS SiGe power amp...
International audienceThis paper presents the design of a broadband power amplifier (PA) in 130 nm S...
We present a widehand watt-level power amplifier (PA) for the K a-band designed and implemented in t...
This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers f...
This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. ...
This letter presents a four-way parallel-series power amplifier (PA) in 55-nm SiGe BiCMOS with in-li...
This work presents the design of a power amplifier (PA) with an AC-coupled common-emitter and common...
In this paper, we reported the design of single-ended power amplifier (PA) delivering an output powe...
This paper demonstrates a 1-Watt output power amplifier MMIC operating from 13.5GHz to 14.5GHz (Ku-b...
This paper describes an 8-way in-phase current combining power amplifier (PA) for Ka-band applicatio...
A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and m...
International audienceThis paper presents the performance of a wideband 0.13μm BiCMOS SiGe power amp...
International audienceThis paper presents the design of a broadband power amplifier (PA) in 130 nm S...
We present a widehand watt-level power amplifier (PA) for the K a-band designed and implemented in t...
This paper presents an architecture for a SiGe E-band power amplifier using a stacked transformers f...
This letter describes an ultra-broadband power amplifier (PA) in a 130 nm SiGe:C BiCMOS technology. ...
This letter presents a four-way parallel-series power amplifier (PA) in 55-nm SiGe BiCMOS with in-li...
This work presents the design of a power amplifier (PA) with an AC-coupled common-emitter and common...
In this paper, we reported the design of single-ended power amplifier (PA) delivering an output powe...