We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-locked laser which shows extra broad frequency comb generation. The ring laser was characterized in frequency and time domains for a range of the current levels injected in the semiconductor optical amplifier. The study showed an increase of the bandwidth to over 40 nm at the -20 dB level. The coherence between the longitudinal modes in the wide comb is demonstrated by the characterization of a spectrally filtered signal in time and RF domains. The relative time delay across the optical comb was measured.</p
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
\u3cp\u3eWe present an investigation of an InP quantum-well-based integrated extended cavity passive...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
\u3cp\u3eWe present an investigation of an InP quantum-well-based integrated extended cavity passive...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...
A mode-locked extended cavity quantum well ring laser at 1.58 μm with a repetition rate of 2.5 GHz i...