The role of hydrogen during plasma beam deposition of amorphous thin films
- Sanden, van de, M.C.M.
- Severens, R.J.
- Meulenbroeks, R.F.G.
- Graaf, de, M.J.
- Qing, Z.
- Otorbaev, D.K.
- Engeln, R.A.H.
- Gielen, J.W.A.M.
- Mullen, van der, J.J.A.M.
- Schram, D.C.
DOIAbstract
The influence of wall-associated H/sub 2/ molecules and other hydrogen-containing monomers on the degree of ionization in the expanding thermal plasma used for the fast plasma beam deposition of amorphous hydrogenated carbon (a-C:H) and amorphous hydrogenated silicon (a-Si:H) was determined. Deposition models are discussed with emphasis on the specific role of the ion during deposition. The connection between the role of atomic hydrogen and the degree of ionization in the plasma beam deposition of a-C:H and a-Si:H is addresse
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