In this paper, we present the detailed characterization of a semiconductor ring passively mode-locked laser with a 20 GHz repetition rate that was realized as an indium phosphide based photonic integrated circuit (PIC). Various dynamical regimes as a function of operating conditions were explored in the spectral and time domain. A record bandwidth of the optical coherent comb from a quantum well based device of 11.5 nm at 3 dB and sub-picosecond pulse generation is demonstrated
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
We report on a record broad 3-dB bandwidth of 14 nm (~1.8 THz around 1532 nm) optical frequency comb...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
We report on a passively modelocked InP/InGaAsP quantum well semiconductor ring laser which operates...
We report on a passively modelocked InP/InGaAsP quantum well semiconductor ring laser which operates...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
We report on a record broad 3-dB bandwidth of 14 nm (~1.8 THz around 1532 nm) optical frequency comb...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
In this paper, we present the detailed characterization of a semiconductor ring passively mode-locke...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
We present an investigation of an InP quantum-well-based integrated extended cavity passively mode-l...
An experimental study of an InP extended cavity passively mode-locked ring laser which shows extra w...
We report on a passively modelocked InP/InGaAsP quantum well semiconductor ring laser which operates...
We report on a passively modelocked InP/InGaAsP quantum well semiconductor ring laser which operates...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
A passively mode locked extended cavity quantum well ring laser at 1.58 µm with repetition rate of 2...
We report on a record broad 3-dB bandwidth of 14 nm (~1.8 THz around 1532 nm) optical frequency comb...