We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is driven by misfit strain (Stranski-Krastanow growth mode). Results of several methods, i.e. atomic force microscopy, transmission electron microscopy, and mainly x-ray diffraction and x-ray reflectivity measurements are presented and discussed
We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and ...
We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and ...
The study of growth and evolution of Ge/Si(111) islands by STM and AFM is presented and discussed. T...
We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is d...
We have studied multilayers of self-assembled Ge-rich dots embedded in silicon grown by molecular-be...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
We have studied the structural properties of single and multiple layers of self-organised Ge islands...
We have studied the structural properties of multiple layers of self-assembled Ge dots non-destructi...
We have studied the structural properties of multiple layers of self-assembled Ge dots non-destructi...
The current status of the research in the ®eld of synthesis and application of silicon and germanium...
The structural and optical properties of self-assembled Ge dots grown on Si(110) substrates by low p...
The Stranski–Krastanow growth mode, which leads to the self-assembled formation of dots, allows one ...
We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and ...
We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and ...
The study of growth and evolution of Ge/Si(111) islands by STM and AFM is presented and discussed. T...
We report mainly on structural investigations on nanoscale Ge rich islands, the growth of which is d...
We have studied multilayers of self-assembled Ge-rich dots embedded in silicon grown by molecular-be...
The generally accepted notions about the formation mechanisms for germanium islands with nanometer-s...
We have studied the structural properties of single and multiple layers of self-organised Ge islands...
We have studied the structural properties of multiple layers of self-assembled Ge dots non-destructi...
We have studied the structural properties of multiple layers of self-assembled Ge dots non-destructi...
The current status of the research in the ®eld of synthesis and application of silicon and germanium...
The structural and optical properties of self-assembled Ge dots grown on Si(110) substrates by low p...
The Stranski–Krastanow growth mode, which leads to the self-assembled formation of dots, allows one ...
We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and ...
We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and ...
The study of growth and evolution of Ge/Si(111) islands by STM and AFM is presented and discussed. T...
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