Low temperature plasma-enhanced atomic layer deposition of metal oxide thin films

Many reported ALD processes are carried out at elevated temperatures (> 100 °C), which is problematic for temperature-sensitive substrates. Plasma-enhanced ALD routes may provide a solution, as the ALD temperature window can be extended to lower deposition temperatures. As such, the plasma-enhanced ALD of Al2O3, TiO2 and Ta2O 5 has been investigated at 25-150 °C using [Al(CH 3)3], [Ti(OiPr)4], [Ti(Cp Me)(Oi(Pr)3] and [Ta(NMe2) 5] respectively as precursors. An O2 plasma was employed as the oxygen source. We have demonstrated metal oxide thin film deposition at temperatures as low as room temperature and compared the results with corresponding thermal ALD routes to the same materials. © The Electrochemical Society