a wet-chemical etching process, the resulting etched shape is smaller than the originally designed shape at the mask. This is caused by the fact that, as soon as material next to the mask is dissolved, material under the mask will be dissolved too. This is the so-called undercut effect. During an etching process, eddies arise inside the etch-hole cavity, which decrease the etch-speed. These eddies may lead to an increase of the undercut. In order to improve the production process, it is necessary to have insight into these phenomena. Therefore, in this thesis the simulation of convection-driven wet-chemical etching is studied. It is known that the boundary of an etch hole moves slowly during a wet-chemical etching process. Therefore, the ve...
We developed a simulation tool for the three-dimensional orientation-dependent wet etching of silico...
Photochemical machining can satisfy the large demand coming from the microproducts market. The metal...
International audienceA numerical model is proposed to simulate the isotropic wet etching of silicon...
a wet-chemical etching process, the resulting etched shape is smaller than the originally designed s...
The concentration of dissolved material in an etch-hole is computed in order to construct a numerica...
The effect of fluid flow, transport, and reaction on the shape evolution of two-dimensional cavities...
A total-concentration fixed-grid method is presented to model the convection-driven wet chemical etc...
Abstract. A numerical model based on the total concentration of etchant is proposed to model the wet...
A method of computing the concentration field of dissolved material inside an etch-hole is presented...
In this paper we discuss the application of a space-time discontinuous Galerkin finite element metho...
Replacement of wet etch processes in microelectronics manufacturing requires the development of new ...
177 p.Chemical Etching (CE) is an important production process for the fabrication of electronic dev...
Abstract. In this paper we discuss the application of a space-time discontinuous Galerkin nite eleme...
In this paper we discuss the application of a space-time discontinuous Galerkin finite element metho...
336 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Manufacturing of Integrated C...
We developed a simulation tool for the three-dimensional orientation-dependent wet etching of silico...
Photochemical machining can satisfy the large demand coming from the microproducts market. The metal...
International audienceA numerical model is proposed to simulate the isotropic wet etching of silicon...
a wet-chemical etching process, the resulting etched shape is smaller than the originally designed s...
The concentration of dissolved material in an etch-hole is computed in order to construct a numerica...
The effect of fluid flow, transport, and reaction on the shape evolution of two-dimensional cavities...
A total-concentration fixed-grid method is presented to model the convection-driven wet chemical etc...
Abstract. A numerical model based on the total concentration of etchant is proposed to model the wet...
A method of computing the concentration field of dissolved material inside an etch-hole is presented...
In this paper we discuss the application of a space-time discontinuous Galerkin finite element metho...
Replacement of wet etch processes in microelectronics manufacturing requires the development of new ...
177 p.Chemical Etching (CE) is an important production process for the fabrication of electronic dev...
Abstract. In this paper we discuss the application of a space-time discontinuous Galerkin nite eleme...
In this paper we discuss the application of a space-time discontinuous Galerkin finite element metho...
336 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Manufacturing of Integrated C...
We developed a simulation tool for the three-dimensional orientation-dependent wet etching of silico...
Photochemical machining can satisfy the large demand coming from the microproducts market. The metal...
International audienceA numerical model is proposed to simulate the isotropic wet etching of silicon...