We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potencial of this system. ©2005 Optical Society of Americ
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithogra...
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
Above room-temperature (T>=400 K) operation of GaInAs/AlAsSb-based quantum-cascade lasers has been d...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quantum-cascade lasers are unipolar light sources based on only one type of carrier, usually electro...
Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...
Quaternary-barrier-containing GaInAs/A1GaAsSb quantum-cascade lasers, motivated by reducing the barr...
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithogra...
We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP ...
We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on In...
We report the first demonstration of InGaAs/AlAsSb/InP quantum cascade lasers. Laser characteristics...
Molecular beam epitaxial growth of quaternary barrier GaInAs/AlGaAsSb quantum cascade lasers grown l...
Above room-temperature (T>=400 K) operation of GaInAs/AlAsSb-based quantum-cascade lasers has been d...
We report single longitudinal mode, P 300K operation of MOVPE-grown InGaAs/ AIInAs DFB quantum casca...
The growth and characterization of quantum cascade (QC) lasers based on InGaAs/InAlAs material syste...
Quantum-cascade lasers are unipolar light sources based on only one type of carrier, usually electro...
Short wavelength (lambda < 5 mu m) quantum cascade lasers are of current interest as they operate in...
We report on the realization of quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As...
In this work, we demonstrate the features of a two-stage epitaxial growth technique and show the res...
Quaternary-barrier-containing GaInAs/A1GaAsSb quantum-cascade lasers, motivated by reducing the barr...
We report single longitudinal mode, T> 300K operation of MOVPE-grown InGaAs/ AlInAs DFB quantum c...
Experimental data for an InP-based 40-stage quantum cascade laser structure grown on a 6-in. GaAs su...
An InP-based one-dimensional photonic crystal quantum cascade laser is realized. With photo lithogra...