Large-Field Ion-Optics for Projection and Proximity Printing and for Mask-Less Lithography (ML2)
- Loeschner, H.
- Stengl, G.
- Buschbeck, H.
- Chalupka, A.
- Lammer, G.
- Platzgummer, E.
- Vonach, H.
- Jager, de, P.W.H.
- Kaesmaier, R.
- Ehrmann, A.
- Hirscher, S.
- Wolter, A.
- Dietzel, A.H.
- Berger, R.
- Grimm, H.
- Terris, B.D.
- Bruenger, W.H.
- Adam, D.
- Boehm, M.
- Eichhorn, H.
- Springer, R.
- Butschke, J.
- Letzkus, F.
- Ruchhoeft, P.
- Wolfe, J.C.
DOIAbstract
Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmo exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed
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