Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (Ec) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of Ec and a good endurance up to 1011 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of Ec with decreasing thickness of the ferroelectric layer. We show that charge injection can e...
PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7−δ (YBCO) thin films were fabricated by a pulsed laser depositio...
The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (...
Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–...
Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 ...
120005891534Keywords: PZT thin film, D-E hysteresis, SrRuO3 film, polarization switching, inprint, d...
Significant effort is presently focused on reducing the size and weight of power electronic modules....
Highly (001)-oriented Pb(Zr 0.52Ti 0.48)O3 (PZT) thin films with LaNiO3 (LNO) bottom electrodes have...
PhD ThesisThis thesis presents a study of negative capacitance in the robust perovskite BaTiO3. Nega...
In the context of miniaturization of devices, ferroelectric materials are used as multifunctional ma...
A domain model consistent with the measured capacitance-voltage ( CV) characteristic of PZT (Pb( Zr,...
International audienceElectrical properties of ferroelectric capacitors based on PbZr0.52Ti0.48O3 th...
MEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and S...
Ferroelectric materials are one of the most attractive candidates for the next generation of nonvola...
Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed lase...
With the intensive use of modern microelectronic devices in numerous areas, there is an increasing d...
PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7−δ (YBCO) thin films were fabricated by a pulsed laser depositio...
The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (...
Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–...
Thin-film ferroelectric capacitors consisting of PbZr0.53Ti0.47O3 sandwiched between La0.5Sr0.5CoO3 ...
120005891534Keywords: PZT thin film, D-E hysteresis, SrRuO3 film, polarization switching, inprint, d...
Significant effort is presently focused on reducing the size and weight of power electronic modules....
Highly (001)-oriented Pb(Zr 0.52Ti 0.48)O3 (PZT) thin films with LaNiO3 (LNO) bottom electrodes have...
PhD ThesisThis thesis presents a study of negative capacitance in the robust perovskite BaTiO3. Nega...
In the context of miniaturization of devices, ferroelectric materials are used as multifunctional ma...
A domain model consistent with the measured capacitance-voltage ( CV) characteristic of PZT (Pb( Zr,...
International audienceElectrical properties of ferroelectric capacitors based on PbZr0.52Ti0.48O3 th...
MEM acknowledges a support from the Region of Haut de France and IPR the Ministry of Education and S...
Ferroelectric materials are one of the most attractive candidates for the next generation of nonvola...
Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed lase...
With the intensive use of modern microelectronic devices in numerous areas, there is an increasing d...
PbZr0.52Ti0.48O3 (PZT) and YBa2Cu3O7−δ (YBCO) thin films were fabricated by a pulsed laser depositio...
The present study describes the growth and characterization of pulsed laser ablated Bao.sSro.sTiOs (...
Full-perovskite Pb0.87Ba0.1La0.02(Zr0.6Sn0.33Ti0.07)O3 (PBLZST) thin films were fabricated by a sol–...