High-mobility modulation-doped graded SiGe-channel p-MOSFET's
- Verdonckt-Vandebroek, Sophie
- Crabbe, E.F.
- Meyerson, B.S.
- Harame, D.L.
- Restle, Phillip J.
- Stork, J.M.C.
- Megdanis, A.C.
- Stanis, C.L.
- Bright, A.A.
- Kroesen, G.M.W.
- Warren, A.C.
DOIAbstract
A novel subsurface SiGE-channel p-MOSFET is demonstrated in which modulation doping is used to control the threshold voltage without degrading the channel mobility. A novel device design consisting of a graded SiGe channel, an n+ polysilicon gate, and p+ modulation doping is used. A boron-doped layer is located underneath the graded and undoped SiGe channel to minimize process sensitivity and maximize transconductance. Low-field hole mobilities of 220 cm2/V-s at 300 K and 980 cm2/V-s at 82 K were achieved in functional submicrometer p-MOSFETs
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