The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye temperature, and the parameter B to the harmonic character of the bond
The elastic moduli and elastic constants of the ternary semiconductor alloy AlyGa1-yAs at finite tem...
In the paper, we suggest widening the scope of cryogenic atomic-force microscopy in order to determi...
AbstractIn the paper, we suggest widening the scope of cryogenic atomic-force microscopy in order to...
The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973...
Temperature dependence (RT-1400 C) of Young's modulus and strength of reaction-bonded silicon nitrid...
The temperature dependence of the Grüneisen parameter of MgSiN2 (80¯1600 K), AlN (90¯1600 K), and -S...
© The Electrochemical Society. The vibrational properties of single crystal Si and Ge are studied be...
This paper reports on the measurement of the thermal coefficient of Young's modulus of both single c...
International audienceThe temperature dependence of Young's modulus has been investigated by ultraso...
Stress induced by the thermal gradients near the meltsolid interface affects the intrinsic point def...
In the present study, the vibrational properties of single crystal Ge samples are studied between ro...
Al-16 Si, Al-12.5 Si-1 Ni and Al-12.5 Si-1 Mg ribbons were prepared by melt spinning. Internal frict...
We report a theoretical method to obtain the single-bond energy derivative from temperature-dependen...
The dynamic Young's modulus is studied by the impulse excitation technique (IET) on ZrB2-based compo...
The elastic properties of the Al-Mg-Si direct-chill-cast AA6111 alloy were determined during the unl...
The elastic moduli and elastic constants of the ternary semiconductor alloy AlyGa1-yAs at finite tem...
In the paper, we suggest widening the scope of cryogenic atomic-force microscopy in order to determi...
AbstractIn the paper, we suggest widening the scope of cryogenic atomic-force microscopy in order to...
The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973...
Temperature dependence (RT-1400 C) of Young's modulus and strength of reaction-bonded silicon nitrid...
The temperature dependence of the Grüneisen parameter of MgSiN2 (80¯1600 K), AlN (90¯1600 K), and -S...
© The Electrochemical Society. The vibrational properties of single crystal Si and Ge are studied be...
This paper reports on the measurement of the thermal coefficient of Young's modulus of both single c...
International audienceThe temperature dependence of Young's modulus has been investigated by ultraso...
Stress induced by the thermal gradients near the meltsolid interface affects the intrinsic point def...
In the present study, the vibrational properties of single crystal Ge samples are studied between ro...
Al-16 Si, Al-12.5 Si-1 Ni and Al-12.5 Si-1 Mg ribbons were prepared by melt spinning. Internal frict...
We report a theoretical method to obtain the single-bond energy derivative from temperature-dependen...
The dynamic Young's modulus is studied by the impulse excitation technique (IET) on ZrB2-based compo...
The elastic properties of the Al-Mg-Si direct-chill-cast AA6111 alloy were determined during the unl...
The elastic moduli and elastic constants of the ternary semiconductor alloy AlyGa1-yAs at finite tem...
In the paper, we suggest widening the scope of cryogenic atomic-force microscopy in order to determi...
AbstractIn the paper, we suggest widening the scope of cryogenic atomic-force microscopy in order to...