For performing electron-beam-induced current (EBIC) measurements on sufficiently large samples, the use of a ‘‘planar-collector geometry’’ (i.e., with the collector covering part of the irradiated surface itself) is very attractive. However, the pertinent theoretical EBIC curves for finite surface-recombination velocities s have so far been lacking. This paper presents the complete theoretical expressions for arbitrary values of s and diffusion length L. Simple asymptotic solutions are given for point- and finite-size generation sources. Easy methods are developed to facilitate the application of these solutions in the practical evaluation of L and s from experimental EBIC curves. These methods are applied to experimental data available thr...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
We show, in this paper, how the Electron Beam Induced Current (E. B. I. C.) can be used quantitative...
An improved method is described for extracting material parameters from an experimentalelectron-beam...
For performing electron-beam-induced current (EBIC) measurements on sufficiently large samples, the ...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion l...
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An e...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
We have developed a model for the calculation of the induced current due to an electron beam with an...
A measurement technique employing the scanning electron microscope is described in which values of t...
We have developed a model of calculation of the induced current due to an electron beam. The expres...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
A standard procedure for the determination of the minority carrier diffusion length by means of a sc...
The electrical performances of components like solar cells depend partly on the diffusion length val...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
We show, in this paper, how the Electron Beam Induced Current (E. B. I. C.) can be used quantitative...
An improved method is described for extracting material parameters from an experimentalelectron-beam...
For performing electron-beam-induced current (EBIC) measurements on sufficiently large samples, the ...
The conventional method of extracting the minority carrier diffusion length using the electron beam-...
The performance of bipolar and photodiode devices is determined by the transport properties of the m...
A scanning electron microscope (SEM) was used to measure the electron (minority carrier) diffusion l...
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An e...
Une description alternative, basée sur le concept de probabilité de collecte, est proposée pour l'in...
We have developed a model for the calculation of the induced current due to an electron beam with an...
A measurement technique employing the scanning electron microscope is described in which values of t...
We have developed a model of calculation of the induced current due to an electron beam. The expres...
The diffusion lengths of materials within semiconductor devices have a very strong impact on device ...
A standard procedure for the determination of the minority carrier diffusion length by means of a sc...
The electrical performances of components like solar cells depend partly on the diffusion length val...
This paper discusses the modeling of the measurements which are performed with the charge-collection...
We show, in this paper, how the Electron Beam Induced Current (E. B. I. C.) can be used quantitative...
An improved method is described for extracting material parameters from an experimentalelectron-beam...